Crystal alignment of caffeine deposited onto single crystal surfaces via hot-wall epitaxy.

Crystal alignment of caffeine deposited onto single crystal surfaces via hot-wall epitaxy† †The authors declare no competing financial interest. ‡ ‡Electronic supplementary information (ESI) available: Additional atomic force microscopy images and 2D FFT for various substrate temperatures; detailed X-ray pole figure analysis for needle growth on NaCl; optical microscopy images of caffeine grown on silica surfaces. See DOI: 10.1039/c7ce00515f Click here for additional data file.

Complex Behavior of Caffeine Crystallites on Muscovite Mica Surfaces

Defined fabrication of organic thin films is highly desired in technological, as well as pharmaceutical, applications since morphology and crystal structure are directly linked to physical, electrical, and optical properties. Within this work, the directed growth of caffeine deposited by hot wall epitaxy (HWE) on muscovite mica is studied. Optical and atomic force microscopy measurements reveal...

Detection of Polymer Brushes developed via Single Crystal Growth

Single crystals consisting various surface morphologies and epitaxial structures were applied to investigate the effect of other phase regions in the vicinity of a given tethered chains-covered area having a certain molecular weight of amorphous brushes. The designed experiments demonstrated that regardless of the type of surface morphology (patterned and especial mixed-brushes, homo and co...

Transferable single-crystal GaN thin films grown on chemical vapor-deposited hexagonal BN sheets

Single-crystal gallium nitride (GaN) layers were directly grown on centimeter-scale hexagonal boron nitride (h-BN). Using chemical vapor deposition (CVD), centimeter-scale h-BN films were synthesized on a single-crystal Ni(111) and readily transferred onto amorphous fused silica supporting substrates that had no epitaxial relationship with GaN. For growing fully coalescent GaN layers on h-BN, t...

Coincidence of reciprocal lattice planes model for quasicrystal-crystal epitaxy

A coincidence of reciprocal lattice planes model was developed to calculate the interfacial energy in quasicrystal-crystal epitaxy. This model allows a quantitative description of the interface as opposed to previously employed qualitative models that consider symmetry relations and alignment of rotation axes. Computations were carried out on several types of quasicrystal-crystal systems, namel...